The Japanese Journal of Applied Physics has revealed a Canon Inc. paper on a worldwide shutter entitled  “A 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory” by Masahiro Kobayashi, Hiroshi Sekine, Takafumi Miki, Takashi Muto, Toshiki Tsuboi, Yusuke Onuki, Yasushi Matsuno, Hidekazu Takahashi, Takeshi Ichikawa, and Shunsuke Inoue.

From the paper:

In this paper, we describe a newly developed 3.four μm pixel pitch international shutter CMOS picture sensor (CIS) with twin in-pixel cost area reminiscences (CDMEMs) has about 5.Three M efficient pixels and achieves 19 ke− full effectively capability, 30 ke−/lxcenterdots sensitivity, 2.eight e- rms temporal noise, and −83 dB parasitic gentle sensitivity. In specific, we describe the sensor construction for bettering the sensitivity and element of the readout process. Furthermore, this picture sensor realizes varied readout with twin CDMEMs. For instance, an alternate multiple-accumulation excessive dynamic vary readout process achieves 60 fps operation and over 110 dB dynamic vary in one-frame operation and is appropriate specifically for shifting object capturing. This front-side-illuminated CIS is fabricated in a 130 nm 1P4M with gentle protect CMOS course of.

I don’t converse or really perceive the language of physics, however Richard over at Canon News does and has a damaged this paper all the way down to make it a bit extra comprehensible for us scientific mortals.

Canon publishes a paper discussing a new 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory
Canon publishes a paper discussing a new 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory
Canon publishes a paper discussing a new 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory
Canon publishes a paper discussing a new 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory